Epitaxial growth of low temperature GaN using metal migration enhanced epitaxy for high-quality InGaN/GaN heterojunctions-Reference-Cited by-同舟云学术

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Epitaxial growth of low temperature GaN using metal migration enhanced epitaxy for high-quality InGaN/GaN heterojunctions

Published:2018-08 Issue: Volume:120 Page:781-787
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Woo Hyeonseok,Kim Jongmin,Cho Sangeun,Jo Yongcheol,Roh Cheong Hyun,Lee Jun Ho,Seo Yong Gon,Kim Hyungsang,Im Hyunsik,Hahn Cheol-Koo

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate;Woo;Curr. Appl. Phys.,2014

2. Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer;Woo;Curr. Appl. Phys.,2015

3. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures;Yang;J. Appl. Phys.,2015

4. Recombination pathways in green InGaN/GaN multiple quantum wells;Lin;Nano. Res. Lett.,2017

5. Hydrogen response mechanism of Pt–GaN Schottky diodes;Schalwig;Appl. Phys. Lett.,2002

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy;Materials;2024-02-09

2. Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition;Journal of Alloys and Compounds;2019-11

3. Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications;Applied Surface Science;2019-05

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