Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer-Reference-Cited by-同舟云学术

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Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Published:2015-09 Issue:9 Volume:15 Page:1027-1031
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Woo Hyeonseok,Lee Jongkyong,Jo Yongcheol,Han Jaeseok,Kim Jongmin,Kim Hyungsang,Roh Cheong Hyun,Lee Jun Ho,Park Jungho,Hahn Cheol-Koo,Im Hyunsik

Funder

Ministry of Education, Science and Technology

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference35 articles.

1. GaN Power Transistors on Si Substrates for Switching Applications

2. GaN-Based RF Power Devices and Amplifiers

3. Very-high power density AlGaN/GaN HEMTs

4. Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

5. Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors;Applied Surface Science;2024-11

2. Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes;Journal of Semiconductors;2024-04-01

3. Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment;Applied Physics Letters;2023-11-20

4. 1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination;IEEE Electron Device Letters;2020-10

5. Effect of Organic Additives on the Characteristics of Al/Organic Additive:ZrO2/p-Si Metal–Insulator-Semiconductor (MIS) Type Schottky Barrier Diodes;Journal of Inorganic and Organometallic Polymers and Materials;2019-06-05

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