Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment-Reference-Cited by-同舟云学术

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Published:2023-11-20 Issue:21 Volume:123 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Wu Junye¹^ORCID,Liao Zeliang¹,Wang Haofan¹,Zou Ping¹^ORCID,Zhu Renqiang²^ORCID,Cai Weixiong¹^ORCID,Zhuang Wenrong³,Tu Yudi⁴^ORCID,Chen Shaojun¹,Xiong Xinbo¹,Chiu Hsien-Chin⁵^ORCID,Li Xiaohua¹,Liu Xinke¹^ORCID

Affiliation:

1. College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 1 , Shenzhen 518060, China

2. Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China 2 , Shenzhen 518060, People's Republic of China

3. Dongguan Sino Nitride Semiconductor Co., Ltd. 3 , Dongguan 523270, People's Republic of China

4. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University 4 , Shenzhen 518060, China

5. Department of Electronic Engineering, Chang Gung University 5 , Taoyuan 333, Taiwan

Abstract

In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the process of O2 plasma treatment, GaON was formed on the surface of GaN and further modified the surface potential of the material surface, which made the VON decrease from 0.62 to 0.37 V. Spin-on-glass was deposited on top of devices to form the floating guard ring, which was used to improve the breakdown voltage to 681 V (at J = 1 A/cm2) by reducing the electric field distribution. The vertical GaN SBDs exhibit a specific on-resistance (RON) of 2.6 mΩ cm2. Deterioration of the device under different stress time changes slightly showed great stability of the devices.

Funder

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Guangdong Science Foundation For Distinguished Young Scholars

Shenzhen Science and Technology Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0171406/18218437/213505_1_5.0171406.pdf

Reference40 articles.

1. High-voltage and high-ION/IOFF quasi-vertical GaN-on-Si Schottky barrier diode with argon-implanted termination;IEEE Electron Device Lett.,2021

2. 1.7-kV vertical GaN-on-GaN Schottky barrier diodes with helium-implanted edge termination;IEEE Trans. Electron Devices,2022

3. Vertical GaN power devices: Device principles and fabrication technologies—Part I;IEEE Trans. Electron Devices,2021

4. GaN-based power devices: Physics, reliability, and perspectives;J. Appl. Phys.,2021

5. Review of recent progress on vertical GaN-based PN diodes;Nanoscale Res. Lett.,2021