The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829066
Reference27 articles.
1. Introduction to flash memory
2. On the go with SONOS
3. Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals
4. Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
5. Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer
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