Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process

Author:

Kim Dongsu1ORCID,Song Chong-Myeong1ORCID,Heo Su Jin1ORCID,Pyo Goeun1ORCID,Kim Dongha2ORCID,Lee Ji Hwan3ORCID,Park Kyung-Ho3ORCID,Lee Shinbuhm2ORCID,Kwon Hyuk-Jun1ORCID,Jang Jae Eun1ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science & Technology (DGIST) 1 , Daegu 42988, South Korea

2. Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science & Technology (DGIST) 2 , Daegu 42988, South Korea

3. Convergence Technology Division, Korea Advanced Nano Fab (KANC) 3 , Suwon 16229, South Korea

Abstract

To improve performances of nonvolatile charge trap flash memory devices, we propose an in situ Hf0.5Zr0.5O2 (HZO)/HfO2/Al2O3 stacked structure, which is compatible for Si with the metal–oxide–semiconductor (MOS) process based on all atomic layer deposition. Since the appropriate bandgap difference between Al2O3 and HfO2, stable charge trap operation is achieved. High-quality ferroelectric HZO film characteristics were showed by minimizing defects and Si diffusion through the sub-layer of Al2O3/HfO2. Therefore, HZO as a blocking layer enhances the memory performance of the charge trap structure due to its specific polarization effect. The proposed device has the high polarization characteristics of HZO (2Pr > 20 μ C/cm2) along with a MOS-cap window (>4 V), good retention capability (>10 years), fast program/erase response operation times (<200 μs), and strong durability (>105 cycles) while operating as a form of single level cell. By comparing Al2O3 and ferroelectric HZO as a blocking layer of the charge trap device, we confirmed that the HZO/HfO2/Al2O3 multi-layer structure had excellent characteristics according to various memory performance indicators. Our proposed high-performance charge trap flash memory can be employed in various applications, including Si-based three-dimensional structures with artificial intelligence systems.

Funder

Ministry of Science and ICT, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3