A nonvolatile memory element based on an organic field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1788887
Reference19 articles.
1. Low Threshold Self-Starting Operation of an Additive-Pulse Mode-Locked, Diode-Pumped Nd:YLF Laser
2. Physics of the ferroelectric nonvolatile memory field effect transistor
3. Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor
4. Organic Thin Film Transistors for Large Area Electronics
5. Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
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