Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications-Reference-Cited by-同舟云学术

Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Published:2023-06 Issue: Volume:35 Page:105591
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Ajayan J.,Mohankumar P.,Nirmal D.,Joseph L.M.I. Leo,Bhattacharya Sandip,Sreejith S.,Kollem Sreedhar,Rebelli Shashank,Tayal Shubham,Mounika B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference217 articles.

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2. Multipeak coercive electric-field-based multilevel cell nonvolatile memory with antiferroelectric-ferroelectric Field-Effect Transistors (FETs);Liao;IEEE Trans. Ultrason., Ferroelectr., Freq. Control,2022

3. Recessed channel ferroelectric-gate field-effect transistor memory with ferroelectric layer between dual metal gates;Kwak;IEEE Trans. Electron Devices,2022

4. An empirical compact model for ferroelectric field-effect transistor calibrated to experimental data;Wang;IEEE Trans. Electron Devices,2022

5. Comprehensive TCAD- based validation of interface trap-assisted ferroelectric polarization in ferroelectric- gate field-effect transistor memory;Lee;IEEE Trans. Electron Devices,2022

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