Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)-Reference-Cited by-同舟云学术

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Published:2022-06 Issue:6 Volume:69 Page:2214-2221
ISSN:0885-3010
Container-title:IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
language:
Short-container-title:IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

Author:

Liao Chun-Yu¹^ORCID,Hsiang Kuo-Yu¹^ORCID,Lou Zhao-Feng¹,Lin Chen-Ying¹,Tseng Yi-Ju²,Tseng Han-Chen¹,Li Zhi-Xian¹,Ray Wei-Chang¹,Chang Fu-Sheng¹,Wang Chun-Chieh¹,Chen Tzu-Chiang³,Chang Chih-Sheng¹,Lee Min-Hung¹^ORCID

Affiliation:

1. Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan

2. Nuvoton Technology Corporation, Hsinchu, Taiwan

3. Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan

Funder

Ministry of Science and Technology (MOST), Taiwan

Taiwan Semiconductor Research Institute (TSRI) and Nano Facility Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Acoustics and Ultrasonics,Instrumentation

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