Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition
Author:
Affiliation:
1. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Funder
National Science and Technology Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10413236/10381579.pdf?arnumber=10381579
Reference28 articles.
1. A Novel Non-Volatile Memory Update Mechanism for 6G Edge Computing
2. Ferroelectricity in Simple Binary ZrO2 and HfO2
3. Equivalent Oxide Thickness (EOT) Scaling With Hafnium Zirconium Oxide High-κ Dielectric Near Morphotropic Phase Boundary
4. FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations
5. Improved Immunity to Sub-Cycling Induced Instability for Triple-Level Cell Ferroelectric FET Memory by Depositing HfZrOₓ on NH₃ Plasma-Treated Si
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