Improved Immunity to Sub-Cycling Induced Instability for Triple-Level Cell Ferroelectric FET Memory by Depositing HfZrOₓ on NH₃ Plasma-Treated Si-Reference-Cited by-同舟云学术

Improved Immunity to Sub-Cycling Induced Instability for Triple-Level Cell Ferroelectric FET Memory by Depositing HfZrOₓ on NH₃ Plasma-Treated Si

Published:2022-08 Issue:8 Volume:43 Page:1219-1222
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Peng Hao-Kai¹,Liu Chia-Ming¹,Kao Yu-Cheng²,Wu Pin-Jiun³,Wu Yung-Hsien¹^ORCID

Affiliation:

1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan

2. Department of Physics, National Tsing Hua University, Hsinchu, Taiwan

3. National Synchrotron Radiation Research Center, Hsinchu, Taiwan

Funder

Ministry of Science and Technology of Taiwan

Materials Analysis Technology Inc.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9841091/09802087.pdf?arnumber=9802087

Reference22 articles.

1. Ultra-low power robust 3bit/cell Hf0.5Zr0.5O2 ferroelectric FinFET with high endurance for advanced computing-in-memory technology;de;Proc Symp VLSI Technol,2021

2. A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

3. Ferroelectricity in Simple Binary ZrO2 and HfO2

4. Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance

5. Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs

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