Non-volatile memory characteristics of flexible ferroelectric field-effect transistors consisting of Sm-doped BiFeO3 thin films

Author:

Ahn YoonhoORCID,Son Jong Yeog

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Reference53 articles.

1. Thin-film ferroelectric materials and their applications;Martin;Nat. Rev. Mater.,2016

2. Thin‐film ferroelectrics;Fernandez;Adv. Mat.,2022

3. High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory;Kim;J. Mater. Chem. C,2022

4. Progress on Emerging ferroelectric materials for energy harvesting, storage and Conversion;Wei;Adv. Energy Mater.,2022

5. Strain engineering of electro-optic constants in ferroelectric materials;Paillard;npj Comput. Mater.,2019

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