Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1625425
Reference14 articles.
1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
2. Polarization-Based Adjustable Memory Behavior in Relaxor Ferroelectrics
3. High temperature polarization retention of a Pb(Zr0.52Ti0.48)O3/YBa2Cu3O7−x memory cell
4. Radiation effects on ferroelectric thin‐film memories: Retention failure mechanisms
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1. Electrical properties of Pb[Zr0.35Ti0.65]O3 on PEALD Al2O3 for NVM applications;Microelectronics International;2018-10-01
2. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications;Applied Physics A;2018-01-09
3. Integration and Electrical Properties of Ferroelectric Hf0.5Zr0.5O2 Thin Film on Bulk β-Ga2O3(-201) Substrate for Memory Applications;IEEE Electron Device Letters;2018
4. Large piezoelectric coefficient and ferroelectric nanodomain switching in Ba(Ti0.80Zr0.20)O3-0.5(Ba0.70Ca0.30)TiO3 nanofibers and thin films;Applied Physics Letters;2014-03-10
5. Silicon Carbide High Temperature Electronics - Is This Rocket Science?;Future Trends in Microelectronics;2013-06-14
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