Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927274
Reference27 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
3. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
4. Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition
5. Effect of ${\hbox{SiO}}_{2}$ and/or ${\hbox{SiN}}_{x}$ Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors
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2. Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer;IEEE Transactions on Electron Devices;2022-11
3. P‐4.4: Multifunctional Laminated Organic Passivation Layer on InSnZnO Thin‐Film Transistors for Enhanced Reliability;SID Symposium Digest of Technical Papers;2022-10
4. O2 and H2O Barrier-Based High Reliability and Stability Using Polytetrafluoroethylene Passivation Layer for Solution Processed Indium Oxide Thin Film Transistors;IEEE Journal of the Electron Devices Society;2022
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