P‐4.4: Multifunctional Laminated Organic Passivation Layer on InSnZnO Thin‐Film Transistors for Enhanced Reliability
Author:
Affiliation:
1. School of Microelectronics South China University of Technology Guangzhou China
2. School of Integrated Circuits Guangdong University of Technology Guangzhou China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.16085
Reference7 articles.
1. InSnZnO Thin-Film Transistors With Vapor- Phase Self-Assembled Monolayer as Passivation Layer
2. Comparison of illumination effect on amorphous indium gallium zinc oxide and a-Si thin film transistors;Li X.;ECS Journal of Solid State Science and Technology,2014
3. Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors;Chowdhury M. D. H.;Applied Physics Letters,2010
4. Reliability of Crystalline Indium–Gallium–Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination;Park K.;IEEE Transactions on Electron Devices,2015
5. Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors;Bermundo J. P.;Applied Physics Letters,2015
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