Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition-Reference-Cited by-同舟云学术

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

Published:2010-11-08 Issue:19 Volume:97 Page:192103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Te-Chih,Chang Ting-Chang,Hsieh Tien-Yu,Tsai Chih-Tsung,Chen Shih-Ching,Lin Chia-Sheng,Hung Ming-Chin,Tu Chun-Hao,Chang Jiun-Jye,Chen Po-Lun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3514251

Reference11 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

3. Circuits using uniform TFTs based on amorphous In-Ga-Zn-O

4. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

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