Stabilizing solution-processed metal oxide thin-film transistors via trilayer organic–inorganic hybrid passivation-Reference-Cited by-同舟云学术

Stabilizing solution-processed metal oxide thin-film transistors via trilayer organic–inorganic hybrid passivation

Published:2021-03-01 Issue:3 Volume:11 Page:035027
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wei Xiaozhu¹,Kumagai Shohei¹^ORCID,Sasaki Mari¹,Watanabe Shun¹^ORCID,Takeya Jun¹

Affiliation:

1. Material Innovation Research Center and Department of Advanced Materials Science, Graduate School of Frontier Sciences, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0038128

Reference37 articles.

1. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

2. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

3. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

4. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

5. Electrical Stability of Solution-Processed a-IGZO TFTs Exposed to High-Humidity Ambient for Long Periods

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