Low threshold 1.51 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97339
Reference5 articles.
1. Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement
2. Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser
3. InGaAsP laser with semi‐insulating current confining layers
4. Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth
5. Planar buried heterostructure InP/GaInAs lasers grown entirely by OMVPE
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1. 57Fe Mössbauer studies on 57Mn∗ implanted InP and InAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
2. Effects of n-type doping on active Fe sites in ion implanted Fe in InP;Applied Physics Letters;2006-06-19
3. Atomic environment of Fe following high-temperature implantation in InP;Physical Review B;2003-12-31
4. High-speed and low-relative-intensity noise 1.3 mu m InGaAsP semi-insulating buried crescent lasers;IEEE Journal of Quantum Electronics;1991-06
5. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
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