InGaAsP laser with semi‐insulating current confining layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96871
Reference3 articles.
1. Growth of Fe-doped semi-insulating InP by MOCVD
2. InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement
3. Analysis of leakage currents in 1.3-µm InGaAsP real-index-guided lasers
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2. Highly reliable high performance waveguide-integrated InP∕InGaAs pin photodiodes for 40 Gbit∕s fibre-optical communication application;Electronics Letters;2003
3. Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers with a semi-insulating GaInP:Fe burying layer;Journal of Applied Physics;2002-09
4. Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy;Applied Physics Letters;2002-08-05
5. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
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