Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1491607
Reference12 articles.
1. TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY
2. pn-junction delineation in Si devices using scanning capacitance spectroscopy
3. Advances in experimental technique for quantitative two-dimensional dopant profiling by scanning capacitance microscopy
4. Another dimension in device characterization
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