pn-junction delineation in Si devices using scanning capacitance spectroscopy-Reference-Cited by-同舟云学术

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pn-junction delineation in Si devices using scanning capacitance spectroscopy

Published:2000-02 Issue:3 Volume:87 Page:1485-1495
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Edwards Hal,Ukraintsev Vladimir A.,San Martin Richard,Johnson F. Scott,Menz Philip,Walsh Shawn,Ashburn Stan,Wills K. Scott,Harvey Ken,Chang Mi-Chang

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.372039

Reference12 articles.

1. Methods for the measurement of two-dimensional doping profiles

2. Scanning capacitance microscopy on a 25 nm scale

3. Depth dependent carrier density profile by scanning capacitance microscopy

4. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon

5. Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices

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