Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices-Reference-Cited by-同舟云学术

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Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices

Published:1998-02-09 Issue:6 Volume:72 Page:698-700
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Edwards Hal,McGlothlin Rudye,San Martin Richard,U Elisa,Gribelyuk Michael,Mahaffy Rachel,Ken Shih C.,List R. Scott,Ukraintsev Vladimir A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120849

Reference5 articles.

1. Methods for the measurement of two-dimensional doping profiles

2. Scanning capacitance microscopy on a 25 nm scale

3. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon

4. Quantitative two‐dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy

5. Depth dependent carrier density profile by scanning capacitance microscopy

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4. Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM);Nano Express;2021-03-01

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