Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers with a semi-insulating GaInP:Fe burying layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1498955
Reference27 articles.
1. 0.78- and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD
2. Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure
3. 0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
4. Low threshold buried heterostructure vertical cavity surface emitting laser
5. Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth
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