Planar buried heterostructure InP/GaInAs lasers grown entirely by OMVPE-Reference-Cited by-同舟云学术

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Planar buried heterostructure InP/GaInAs lasers grown entirely by OMVPE

Published:1986 Issue:18 Volume:22 Page:947
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Miller B.I.,Koren U.,Capik R.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860646?crawler=true&mimetype=application/pdf

Reference9 articles.

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates;Materials Science-Poland;2016-11-06

2. Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers with a semi-insulating GaInP:Fe burying layer;Journal of Applied Physics;2002-09

3. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05

4. High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry;IEEE Journal of Quantum Electronics;1995

5. Fe Incorporation and Precipitation in Semi‐Insulating Fe‐Doped InP Grown by Metalorganic Chemical Vapor Deposition;Journal of The Electrochemical Society;1994-01-01

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