High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry-Reference-Cited by-同舟云学术

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High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry

Published:1995 Issue:8 Volume:31 Page:1494-1503
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Fouquet J.E.,Trott G.R.,Sorin W.V.,Ludowise M.J.,Braun D.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx1/3/9025/00400402.pdf?arnumber=400402

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of interference noise caused by Fresnel reflection in all-fiber white-light interferometer;Applied Optics;2017-10-30

2. Quasi-distributed birefringence dispersion measurement for polarization maintain device with high accuracy based on white light interferometry;Optics Express;2016-01-20

3. Broad spectrum InGaAsP edge-emitting light-emitting diode using selective-area metal-organic vapor-phase epitaxy;IEEE Photonics Technology Letters;1998-09

4. High performance and novel effects of micromechanical tunable vertical-cavity lasers;IEEE Journal of Selected Topics in Quantum Electronics;1997-04

5. InGaAsP multiple quantum well edge-emitting light-emitting diode showing low coherence characteristics using selective-area metalorganic vapor phase epitaxy;Optical Review;1997-01

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