Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth-Reference-Cited by-同舟云学术

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Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

Published:1986 Issue:16 Volume:22 Page:869
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Wilt D.P.,Long J.,Dautremont-Smith W.C.,Focht M.W.,Shen T.M.,Hartman R.L.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860594?crawler=true&mimetype=application/pdf

Reference7 articles.

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05

2. Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas;Optical and Quantum Electronics;1996-05

3. Effect of excess Zn around the active‐stripe mesa on the lasing threshold current of a [01̄1] oriented InGaAsP/InP buried‐heterostructure laser diode;Applied Physics Letters;1994-11-07

4. Long Wavelength Laser Diode Reliability and Lattice Imperfections;MRS Bulletin;1993-12

5. Semiconductor laser damage due to human-body-model electrostatic discharge;Journal of Applied Physics;1993-08

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