Effect of excess Zn around the active‐stripe mesa on the lasing threshold current of a [01̄1] oriented InGaAsP/InP buried‐heterostructure laser diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112681
Reference13 articles.
1. Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition
2. Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates
3. Dependence of doping on substrate orientation for GaAs: C grown by OMVPE
4. Crystal orientation dependence of impurity dopant incorporation in MOVPE-grown III–V materials
5. Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOCVD growth and regrowth of quantum cascade lasers;SPIE Proceedings;2007-02-08
2. Degradation of InGaAsP/InP-based multiquantum-well lasers;Journal of Applied Physics;1999-09
3. Studies of Internal Structure in InGaAsP/InP‐Based Lasers Using Atomic Force Microscopy in Combination with Selective Etching;Journal of The Electrochemical Society;1999-02-01
4. On the degradation of InGaAsP/InP-based bulk lasers;Journal of Lightwave Technology;1999
5. Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy;Journal of Applied Physics;1998-10-15
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