Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94728
Reference14 articles.
1. CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers
2. Electrical derivative characteristics of InGaAsP buried heterostructure lasers
3. Shunt current and excess temperature sensitivity of Ith and ηex in 1.3 μm InGaAsP DH lasers
4. GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement
5. Proton and deuteron implantations in GaAs, GaP and InP
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1. High-resistance buried layers by MeV Fe implantation in n-type InP;Applied Physics Letters;1999-08-02
2. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
3. Migration and related buried epitaxy using digital epitaxial growth conditions;Applied Surface Science;1994-12
4. Investigation of lattice distortions in InP crystals implanted with Fe+ions by means of high‐resolution x‐ray diffraction and x‐ray standing‐wave methods;Journal of Applied Physics;1994-12
5. Production of semi‐insulating layers inn‐doped InP by Fe implantation;Journal of Applied Physics;1994-11
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