GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement-Reference-Cited by-同舟云学术

GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement

Published:1980-05 Issue:9 Volume:36 Page:730-733
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsang W. T.,Logan R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.91648

Reference10 articles.

1. Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

2. Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

3. Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy

4. GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers

5. Low‐current‐threshold strip‐buried‐heterostructure lasers with self‐aligned current injection stripes

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1. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05

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3. Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes;MRS Proceedings;1993

4. InGaAs-GaAs-AlGaAs strained-layer quantum well lasers by metal-organic chemical vapour deposition;Semiconductor Science and Technology;1990-06-01

5. InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition;Applied Physics Letters;1989-02-06