Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327668
Reference10 articles.
1. AlyGa1‐yAs‐AlxGa1‐xas laser structures for integrated optics grown by molecular‐beam epitaxy
2. Invited: Preparation and Properties of GaAs Devices by Molecular Beam Epitaxy
3. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
4. Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
5. Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy
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1. Quantum Well Heterostructure Lasers;VLSI Electronics Microstructure Science;1994
2. Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry;Applied Physics Letters;1993-10-04
3. Site selection spectroscopy in CaF2 : Nd3+ films grown by molecular beam epitaxy;Solid State Communications;1993-01
4. Molecular Beam Epitaxy;Materials Processing: Theory and Practices;1989
5. Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes;IEEE Journal of Quantum Electronics;1987-06
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