Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110650
Reference8 articles.
1. Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
2. Effect of growth temperature on the photoluminescent spectra from Sn‐doped Ga1−xAlxAs grown by molecular beam epitaxy
3. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
4. Summary Abstract: The effect of the oxygen concentration on the electrical and optical properties of AlGaAs films grown by MBE
5. Photoluminescence killer center in AlGaAs grown by molecular‐beam epitaxy
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2. Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy;Journal of Crystal Growth;2003-04
3. Diffusion and stability of oxygen in GaAs and AlAs;Physical Review B;1999-08-15
4. Tunneling Current through Si Donor Level in GaAs/AlAs Single-Barrier Diodes;Japanese Journal of Applied Physics;1997-07-15
5. Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimensional electron gas;Applied Physics Letters;1997-02-03
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