Production of semi‐insulating layers inn‐doped InP by Fe implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357220
Reference36 articles.
1. The electrical properties of n-type semi-insulating indium phosphide
2. A study of the deep acceptor levels of iron in InP
3. Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement
4. Current confinement and leakage currents in planar buried-ridge-structure laser diodes on n-substrate
5. Ion implantation for isolation of III-V semiconductors
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1. Carrier removal and transport in photonic integrated circuit ready InGaAsP/InP substrate: Electrical and transients of charges evaluation;Materials Science in Semiconductor Processing;2021-01
2. Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing;Journal of Physics D: Applied Physics;2013-04-03
3. Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence;Journal of Luminescence;2008-02
4. Redistribution of Ni implanted into InP;The European Physical Journal Applied Physics;2001-02
5. Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP;Journal of Applied Physics;1999-01-15
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