Interface characterization of atomic layer deposited high-k on non-polar GaN
Author:
Affiliation:
1. Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, USA
Funder
DOD | United States Navy | Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4986215
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