Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN-Reference-Cited by-同舟云学术

Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN

Published:2021-06-12 Issue:33 Volume:31 Page:2101441
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Henning Alex¹^ORCID,Bartl Johannes D.¹²^ORCID,Zeidler Andreas¹,Qian Simon³,Bienek Oliver¹,Jiang Chang‐Ming¹,Paulus Claudia¹,Rieger Bernhard²,Stutzmann Martin¹^ORCID,Sharp Ian D.¹^ORCID

Affiliation:

1. Walter Schottky Institute and Physics Department Technical University of Munich 85748 Garching Germany

2. WACKER‐Chair of Macromolecular Chemistry Catalysis Research Center Technical University of Munich 85748 Garching Germany

3. Chair of Technical Electrochemistry Department of Chemistry Technical University of Munich 85748 Garching Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

H2020 Marie Skłodowska-Curie Actions

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202101441

Reference77 articles.

1. A brief review of atomic layer deposition: from fundamentals to applications

2. Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

3. Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells

4. Atomic Layer Deposited Corrosion Protection: A Path to Stable and Efficient Photoelectrochemical Cells

5. Atomic Layer Deposition of Nanostructured Materials for Energy and Environmental Applications

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