Interface characterization of Al2O3/m-plane GaN structure
Author:
Affiliation:
1. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-0813, Japan
2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8601, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0031232
Reference36 articles.
1. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates
2. Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy
3. Recent progress of GaN power devices for automotive applications
4. Insulated gate and surface passivation structures for GaN-based power transistors
5. Recent development of vertical GaN power devices
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