Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120191
Reference20 articles.
1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
3. High responsitivity intrinsic photoconductors based on AlxGa1−xN
4. OPTICAL ABSOPTION OF GaN
5. Fundamental absorption edge in GaN, InN and their alloys
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