Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates-Reference-Cited by-同舟云学术

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Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

Published:2021-06-14 Issue:22 Volume:129 Page:225701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hamachi T.¹^ORCID,Tohei T.¹,Hayashi Y.¹^ORCID,Imanishi M.²,Usami S.²,Mori Y.²,Ikarashi N.³^ORCID,Sakai A.¹^ORCID

Affiliation:

1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

2. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

3. Institute of Materials and System for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

Japan Science and Technology Agency

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0053766

Reference46 articles.

1. Recent progress of GaN power devices for automotive applications

2. Recent development of vertical GaN power devices

3. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

4. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

5. Dislocation reduction in GaN crystal by advanced-DEEP

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches;physica status solidi (RRL) – Rapid Research Letters;2024-06-26

2. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction;Journal of Applied Physics;2024-06-11

3. Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid;Journal of Applied Physics;2023-11-15

4. Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate;Materials Science in Semiconductor Processing;2023-11

5. Reducing GaN crystal dislocations through lateral growth on uneven seed crystal surfaces using the Na-flux method;Japanese Journal of Applied Physics;2023-10-01

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