Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3562305
Reference12 articles.
1. Fermi-level pinning and charge neutrality level in germanium
2. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
3. Fermi-level depinning for low-barrier Schottky source/drain transistors
4. Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
5. Ohmic contact formation on n-type Ge
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