On the current conduction mechanisms of WO3/n-Ge Schottky interfaces

Author:

Henry Thomas G.,Ashok Kumar A.,Rajagopal Reddy V.,Janardhanam V.,Choi Chel-Jong

Publisher

Elsevier BV

Subject

General Medicine

Reference33 articles.

1. Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode;Mahato;AIP Adv.,2017

2. Capacitance–voltage behaviour of schottky diodes fabricated on p-type silicon for radiation-hard detectors;Moloi;Phys. Chem.,2013

3. The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals;Kaya;J. Mater. Sci.: Mater. Electron.,2021

4. Structural, optical, and electrical properties of spray-pyrolyzed MoO3 thin films by varying precursor molarity, as hole-selective contact for silicon-based heterojunction;Yusuf;J. Mater. Sci.: Mater. Electron.,2020

5. Defect states assisted charge conduction in Au/MoO3–x/n-Si Schottky barrier diode;Mahato;Mater. Res. Express,2018

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