On the current conduction mechanisms of WO3/n-Ge Schottky interfaces-Reference-Cited by-同舟云学术

On the current conduction mechanisms of WO3/n-Ge Schottky interfaces

Published:2023-02 Issue: Volume: Page:
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Henry Thomas G.,Ashok Kumar A.,Rajagopal Reddy V.,Janardhanam V.,Choi Chel-Jong

Publisher

Elsevier BV

Subject

General Medicine

Reference33 articles.

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2. Capacitance–voltage behaviour of schottky diodes fabricated on p-type silicon for radiation-hard detectors;Moloi;Phys. Chem.,2013

3. The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals;Kaya;J. Mater. Sci.: Mater. Electron.,2021

4. Structural, optical, and electrical properties of spray-pyrolyzed MoO3 thin films by varying precursor molarity, as hole-selective contact for silicon-based heterojunction;Yusuf;J. Mater. Sci.: Mater. Electron.,2020

5. Defect states assisted charge conduction in Au/MoO3–x/n-Si Schottky barrier diode;Mahato;Mater. Res. Express,2018

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer;Journal of Materials Science: Materials in Electronics;2024-07

2. A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements;Journal of Materials Science: Materials in Electronics;2024-04

3. Analysis of microstructure, chemical state and electrical features of Ti/WO3/p-InP heterojunction with a tungsten oxide insulating layer;Journal of Materials Science: Materials in Electronics;2023-07