Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1490399
Reference9 articles.
1. Cross-sectional nano-spreading resistance profiling
2. Epitaxial staircase structure for the calibration of electrical characterization techniques
3. Observation of strong contrast from doping variations in transmission electron microscopy of InP‐based semiconductor laser diodes
4. Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy
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