Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120902
Reference9 articles.
1. Temporally resolved regrowth of InP
2. Quantitative two‐dimensional dopant profiling of abrupt dopant profiles by cross‐sectional scanning capacitance microscopy
3. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon
4. Orientation dependent growth behaviour during hydride VPE regrowth of InP:Fe around reactive ion etched mesas
5. Morphology analysis in localized crystal growth and dissolution
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