Strain effects associated with SiO layers evaporated onto GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331803
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1. A simple approach to the calculation of the mechanical stress in silicon devices;Journal of Electronics (China);1993-07
2. Issues in Manufacturing Unique Silicon Devices Using Rapid Thermal Annealing;Rapid Thermal Processing;1993
3. Measurement of thermal expansion coefficients of W, WSi, WN, and WSiN thin film metallizations;Journal of Applied Physics;1990-01-15
4. Investigation of stress effects on the direct current characteristics of GaAs metal‐semiconductor field‐effect transistors through the use of externally applied loads;Applied Physics Letters;1988-05-23
5. Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs;IEEE Transactions on Electron Devices;1988
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