Investigation of stress effects on the direct current characteristics of GaAs metal‐semiconductor field‐effect transistors through the use of externally applied loads-Reference-Cited by-同舟云学术

Investigation of stress effects on the direct current characteristics of GaAs metal‐semiconductor field‐effect transistors through the use of externally applied loads

Published:1988-05-23 Issue:21 Volume:52 Page:1800-1802
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McNally Patrick J.,Cooper Lisa S.,Rosenberg James J.,Jackson T. N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.99630

Reference11 articles.

1. Orientation effect on planar GaAs Schottky barrier field effect transistors

2. Orientation effect of self‐aligned source/drain planar GaAs Schottky barrier field‐effect transistors

3. Orientation effect reduction through capless annealing of self‐aligned planar GaAs Schottky barrier field‐effect transistors

4. Comparison of the orientation effect of SiO2- and Si3N4-encapsulated GaAs MESFET's

5. Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristics

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1. Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's;IEEE Transactions on Electron Devices;1996-07

2. Piezoelectrically-active defects and their impact on the performance of GaAs MESFETs;Journal of Materials Processing Technology;1995-12

3. Modelling the effects of piezoelectrically active defects and their impact on the threshold voltage of GaAs metal-semiconductor field effect transistors;Materials Science and Engineering: B;1994-12

4. Modelling and experimental analysis of the impact of process induced stress on the electrical performance of GaAs MESFETs;Solid-State Electronics;1993-11

5. The electrical, optical and device effects of dislocations and grain boundaries;Extended Defects in Semiconductors