Measurement of thermal expansion coefficients of W, WSi, WN, and WSiN thin film metallizations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345779
Reference14 articles.
1. Characterization of WSix/GaAs Schottky contacts
2. Refractory metal silicides for self-aligned gate modulation doped n+-(Al,Ga)As/GaAs field-effect transistor integrated circuits
3. WSix refractory metallization for GaAs metal–semiconductor field-effect transistors
4. Characterization of reactively sputtered WNx film as a gate metal for self-alignment GaAs metal–semiconductor field effect transistors
5. High‐temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions
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