Anomalous excitation dependence of electroluminescence in InGaN∕GaN light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2422709
Reference29 articles.
1. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
2. Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation
3. A Review of Dry Etching of GaN and Related Materials
4. Solid phase immiscibility in GaInN
5. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intensive measures of luminescence in GaN/InGaN heterostructures;PLOS ONE;2019-09-24
2. Temperature and excitation intensity dependence of photoluminescence in AlGaN quantum wells with mixed two-dimensional and three-dimensional morphology;Journal of Applied Physics;2011-10
3. Characterization of Nanocrystallites of InGaN/GaN Multiquantum Wells by High-Resolution X-ray Diffraction;IEEE Transactions on Nanotechnology;2011-07
4. Electroluminescence observation of nanoscale phase separation in quaternary AlInGaN light-emitting diodes;Applied Physics Letters;2010-04-12
5. Interfacial Charge Distribution-Dependent Modulation of Luminescence Characteristics of InGaN∕GaN Multiquantum-Barrier Heterosystems;Journal of The Electrochemical Society;2010
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