A Review of Dry Etching of GaN and Related Materials-Reference-Cited by-同舟云学术

A Review of Dry Etching of GaN and Related Materials

Published:2000 Issue:1 Volume:5 Page:
ISSN:1092-5783
Container-title:MRS Internet Journal of Nitride Semiconductor Research
language:en
Short-container-title:MRS Internet j. nitride semicond. res.

Author:

Pearton S.J.,Shul R. J.,Ren Fan

Abstract

The characteristics of dry etching of the AlGaInN materials system in different reactor types and plasma chemistries are reviewed, along with the depth and thermal stability of etch-induced damage. The application to device processing for both electronics and photonics is also discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Reference15 articles.

1. Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

2. 300°C GaN/AlGaN Heterojunction Bipolar Transistor

3. High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter

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