Author:
Pearton S.J.,Shul R. J.,Ren Fan
Abstract
The characteristics of dry etching of the AlGaInN materials system in different reactor types and plasma chemistries are reviewed, along with the depth and thermal stability of etch-induced damage. The application to device processing for both electronics and photonics is also discussed.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Cited by
137 articles.
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