Temperature and excitation intensity dependence of photoluminescence in AlGaN quantum wells with mixed two-dimensional and three-dimensional morphology-Reference-Cited by-同舟云学术

Temperature and excitation intensity dependence of photoluminescence in AlGaN quantum wells with mixed two-dimensional and three-dimensional morphology

Published:2011-10 Issue:7 Volume:110 Page:073512
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rajanna G.,Feng W.,Sohal S.,Kuryatkov V. V.,Nikishin S. A.,Bernussi A. A.,Holtz M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3645044

Reference24 articles.

1. Spatially resolved cathodoluminescence spectra of InGaN quantum wells

2. Luminescences from localized states in InGaN epilayers

3. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

4. Dynamics of anomalous optical transitions inAlxGa1−xNalloys

5. Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys

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