Enhanced UV luminescence from InAlN quantum well structures using two temperature growth-Reference-Cited by-同舟云学术

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Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

Published:2014-11 Issue: Volume:155 Page:108-111
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Zubialevich Vitaly Z.,Sadler Thomas C.,Dinh Duc V.,Alam Shahab N.,Li Haoning,Pampili Pietro,Parbrook Peter J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference27 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN

5. Metalorganic chemical vapor deposition of group III nitrides—a discussion of critical issues

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer;Journal of Alloys and Compounds;2024-10

2. Room-temperature nonradiative recombination lifetimes in c-plane Al_1−xIn_xN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21);Journal of Applied Physics;2022-10-28

3. Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition;Micro and Nanostructures;2022-05

4. Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy;Applied Physics Letters;2021-08-30

5. Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN;Scientific Reports;2020-10-29

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