Interfacial Charge Distribution-Dependent Modulation of Luminescence Characteristics of InGaN∕GaN Multiquantum-Barrier Heterosystems-Reference-Cited by-同舟云学术

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Interfacial Charge Distribution-Dependent Modulation of Luminescence Characteristics of InGaN∕GaN Multiquantum-Barrier Heterosystems

Published:2010 Issue:12 Volume:157 Page:H1095
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Wang Jen-Cheng,Fang Chia-Hui,Shen Hui-Tang,Wu Ya-Fen,Nee Tzer-En

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

3. 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes

4. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

5. Radiative recombination lifetime measurements of InGaN single quantum well

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