Highly reflective low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2430405
Reference11 articles.
1. High-power AlGaInN flip-chip light-emitting diodes
2. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
3. Surface-plasmon-enhanced light emitters based on InGaN quantum wells
4. Cu-doped indium oxide∕Ag ohmic contacts for high-power flip-chip light-emitting diodes
5. Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes
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1. Highly Reflective Low Resistance Pt/Ag/Ni/Au Based Ohmic Contacts on p-GaN;Springer Proceedings in Physics;2019
2. Effect of interfacial composition on Ag-based Ohmic contact of GaN-based vertical light emitting diodes;Journal of Applied Physics;2018-02-07
3. Thin-GaN LED Materials;Handbook of Advanced Lighting Technology;2017
4. Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer;Superlattices and Microstructures;2015-07
5. Ohmic Contacts on p-GaN;Advanced Electronic Materials;2015-06-22
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