Highly Reflective Low Resistance Pt/Ag/Ni/Au Based Ohmic Contacts on p-GaN
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-97604-4_168
Reference5 articles.
1. M. Koike, N. Shibata, H. Kato, Y. Takahashi. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications. IEEE J. Sel. Top. Quantum Electron. 8(2), 271–277 (2002)
2. S.P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J.S. Speck, S. Nakamura, Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays. Acta Mater. 61, 945–951 (2013)
3. H.W. Jang, J.H. Son, J.-L. Lee, Highly reflective low resistance Ag-based ohmic contacts on p-type GaN using Mg overlayer. Appl. Phys. Lett. 90, 012106-1–012106-3 (2007)
4. H.W. Jang, J.H. Son, J.-L. Lee, Formation of high-quality Ag-based ohmic contacts to p- type GaN. J. Electrochem. Soc. 155(8), H563–H568 (2008)
5. F. Jiang, L.-E. Cai, J.-Y. Zhang, B.-P. Zhang, Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN. Phys. E 42, 2420–2423 (2010)
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